Structure evolution of h.c.p./c.c.p. metal oxide interfaces in solid-state reactions
- Autor(en)
- Chen Li, Gerlinde Habler, Thomas Griffiths, Aleksander Rečnik, Petr Jeřábek, L.C. Götze, Clemens Mangler, Timothy Pennycook, Jannik C. Meyer, Rainer Abart
- Abstrakt
The structure of crystalline interfaces plays an important role in solid-state reactions. The Al
2O
3/MgAl
2O
4/MgO system provides an ideal model system for investigating the mechanisms underlying the migration of interfaces during interface reaction. MgAl
2O
4 layers have been grown between Al
2O
3 and MgO, and the atomic structure of Al
2O
3/MgAl
2O
4 interfaces at different growth stages was characterized using aberration-corrected scanning transmission electron microscopy. The oxygen sublattice transforms from hexagonal close-packed (h.c.p.) stacking in Al
2O
3 to cubic close-packed (c.c.p.) stacking in MgAl
2O
4. Partial dislocations associated with steps are observed at the interface. At the reaction-controlled early growth stages, such partial dislocations coexist with the edge dislocations. However, at the diffusion-controlled late growth stages, such partial dislocations are dominant. The observed structures indicate that progression of the Al
2O
3/MgAl
2O
4 interface into Al
2O
3 is accomplished by the glide of partial dislocations accompanied by the exchange of Al
3+ and Mg
2+ cations. The interface migration may be envisaged as a plane-by-plane zipperlike motion, which repeats along the interface facilitating its propagation. MgAl
2O
4 grains can adopt two crystallographic orientations with a twinning orientation relationship, and grow by dislocations gliding in opposite directions. Where the oppositely propagating partial dislocations and interface steps meet, interlinked twin boundaries and incoherent 3 grain boundaries form. The newly grown MgAl
2O
4 grains compete with each other, leading to a growth selection and successive coarsening of the MgAl
2O
4 grains. This understanding could help to interpret the interface reaction or phase transformation of a wide range of materials that exhibit a similar h.c.p./c.c.p. transition.
- Organisation(en)
- Department für Lithosphärenforschung, Physik Nanostrukturierter Materialien
- Externe Organisation(en)
- Jožef Stefan Institute (IJS), Charles University Prague, Freie Universität Berlin (FU), Max-Planck-Institut für Festkörperforschung
- Journal
- Acta Crystallographica. Section A: Foundation and Advances
- Band
- 74
- Seiten
- 466-480
- Anzahl der Seiten
- 15
- ISSN
- 0108-7673
- DOI
- https://doi.org/10.1107/S205327331800757X
- Publikationsdatum
- 09-2018
- Peer-reviewed
- Ja
- ÖFOS 2012
- 103042 Elektronenmikroskopie, 105113 Kristallographie, 105120 Petrologie, 103018 Materialphysik
- Schlagwörter
- ASJC Scopus Sachgebiete
- Condensed Matter Physics, Allgemeine Materialwissenschaften, Structural Biology, Biochemistry, Inorganic Chemistry, Physical and Theoretical Chemistry
- Link zum Portal
- https://ucrisportal.univie.ac.at/de/publications/6c9f4878-866e-43d3-aaf1-e2663f415698