Determining the Kinetics of As<sub>4</sub>O<sub>6</sub>·2H<sub>2</sub> Formation at High Pressures

Autor(en)
Piotr A. Guńka, Kamil F. Dziubek, Francesco Capitani
Abstrakt

The first quantitative determinations of heterogeneous two-component reaction rates in single crystals under high pressure are reported. The rate of arsenolite inclusion compound with hydrogen, As4O6·2H2, formation on the surface of an arsenolite single crystal has been determined at 1.47 (5) and 1.37 (5) GPa via synchrotron Fourier transform infrared spectroscopy. A thin plate of arsenolite has been completely transformed into the inclusion compound within 1 and 11 h, respectively. The inclusion compound growth rate was found to be linear with a slope of 7.7 (4) μm/h at 1.47 (5) GPa, indicating that reaction at the As4O6/As4O6·2H2 phase boundary is rate-limiting. The kinetics of As4O6·2H2 growth at 1.37 (5) GPa exhibits two domains of linear growth with slopes of 0.25 (1) and 1.2 (1) μm/h. Incidentally, a method of growing thin plates of As4O6 single crystals via spatial confinement is presented. This work shows that the single-crystal study of two-component reaction kinetics in diamond anvil cells is possible and presents one of the feasible ways to do it in a quantitative manner.

Organisation(en)
Institut für Mineralogie und Kristallographie
Externe Organisation(en)
Warsaw University of Technology, European Laboratory for Non-Linear Spectroscopy (LENS), Synchrotron Soleil, IRFU CEA-Saclay laboratory
Journal
Journal of Physical Chemistry C
Band
127
Seiten
15871-15875
Anzahl der Seiten
5
ISSN
1932-7447
DOI
https://doi.org/10.1021/acs.jpcc.3c04426
Publikationsdatum
08-2023
Peer-reviewed
Ja
ÖFOS 2012
105113 Kristallographie, 105116 Mineralogie
ASJC Scopus Sachgebiete
Electronic, Optical and Magnetic Materials, Allgemeine Energie, Physical and Theoretical Chemistry, Surfaces, Coatings and Films
Link zum Portal
https://ucrisportal.univie.ac.at/de/publications/913f1a1e-16ca-4aef-9fec-7088a318f33a