Effects of irradiation damage on the back-scattering of electrons: Silicon-implanted silicon
- Author(s)
- Lutz Nasdala, Andreas Kronz, Dieter Grambole, Ghislain Trullenque
- Abstract
Radiation damage in a (initially crystalline) silicon wafer was generated by microbeam ion implantationwith 600 keV Si+ ions (fluence 5 × 1014 ions/cm2). To produce micro-areas with differentdegrees of damage, 14 implantations at different temperatures (between 23 and 225 °C) were done.The structural state of irradiated areas was characterized using Raman spectroscopy and electronback-scatter diffraction. All irradiated areas showed strong structural damage in surÞ cial regions (estimateddepth
- Organisation(s)
- Department of Mineralogy and Crystallography
- External organisation(s)
- Johannes Gutenberg-Universität Mainz, Georg-August-Universität Göttingen, Helmholtz-Zentrum Dresden-Rossendorf
- Journal
- American Mineralogist: an international journal of earth and planetary materials
- Volume
- 92
- Pages
- 1768-1771
- No. of pages
- 4
- ISSN
- 0003-004X
- DOI
- https://doi.org/10.2138/am.2007.2648
- Publication date
- 2007
- Peer reviewed
- Yes
- Austrian Fields of Science 2012
- 104003 Inorganic chemistry, 1030 Physics, Astronomy
- Portal url
- https://ucrisportal.univie.ac.at/en/publications/8af374c4-1af3-4bf5-bffe-d3defb994295