Determining the Kinetics of As<sub>4</sub>O<sub>6</sub>·2H<sub>2</sub> Formation at High Pressures

Author(s)
Piotr A. Guńka, Kamil F. Dziubek, Francesco Capitani
Abstract

The first quantitative determinations of heterogeneous two-component reaction rates in single crystals under high pressure are reported. The rate of arsenolite inclusion compound with hydrogen, As4O6·2H2, formation on the surface of an arsenolite single crystal has been determined at 1.47 (5) and 1.37 (5) GPa via synchrotron Fourier transform infrared spectroscopy. A thin plate of arsenolite has been completely transformed into the inclusion compound within 1 and 11 h, respectively. The inclusion compound growth rate was found to be linear with a slope of 7.7 (4) μm/h at 1.47 (5) GPa, indicating that reaction at the As4O6/As4O6·2H2 phase boundary is rate-limiting. The kinetics of As4O6·2H2 growth at 1.37 (5) GPa exhibits two domains of linear growth with slopes of 0.25 (1) and 1.2 (1) μm/h. Incidentally, a method of growing thin plates of As4O6 single crystals via spatial confinement is presented. This work shows that the single-crystal study of two-component reaction kinetics in diamond anvil cells is possible and presents one of the feasible ways to do it in a quantitative manner.

Organisation(s)
Department of Mineralogy and Crystallography
External organisation(s)
Warsaw University of Technology, European Laboratory for Non-Linear Spectroscopy (LENS), Synchrotron SOLEIL, IRFU CEA-Saclay laboratory
Journal
Journal of Physical Chemistry C
Volume
127
Pages
15871-15875
No. of pages
5
ISSN
1932-7447
DOI
https://doi.org/10.1021/acs.jpcc.3c04426
Publication date
08-2023
Peer reviewed
Yes
Austrian Fields of Science 2012
105113 Crystallography, 105116 Mineralogy
ASJC Scopus subject areas
Electronic, Optical and Magnetic Materials, General Energy, Physical and Theoretical Chemistry, Surfaces, Coatings and Films
Portal url
https://ucrisportal.univie.ac.at/en/publications/913f1a1e-16ca-4aef-9fec-7088a318f33a